Lifetime Prediction in Power Semiconductor Devices: A Comparative study between Analytical Modeling and Artificial Neural Network
Author:
Affiliation:
1. University of Padova,Department of Management and Engineering,Vicenza,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131380.pdf?arnumber=10131380
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1. Lifetime Estimation of Discrete IGBT Devices Based on Gaussian Process
2. Long-Term Reliability Evaluation of Power Modules With Low Amplitude Thermomechanical Stresses and Initial Defects
3. Prognostics of power MOSFETs under thermal stress accelerated aging using data-driven and model-based methodologies;celaya;Proc Annu Conf Prognostics Health Manage Soc,0
4. Power cycling testing and FE modelling focussed on Al wire bond fatigue in high power IGBT modules
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