Analysis of a Transistor-Based On-State Voltage Measurement Circuit for Condition Monitoring of Power Transistors
Author:
Affiliation:
1. University of Stuttgart, Institute of Robust Power Semiconductor Systems,Stuttgart,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131156.pdf?arnumber=10131156
Reference12 articles.
1. Design of a Fast Dynamic On-Resistance Measurement Circuit for GaN Power HEMTs
2. Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses
3. On-State Voltage Measurement of Fast Switching Power Semiconductors
4. An Optimized Voltage Clamp Circuit for Accurate Power Semiconductor Device on-State Losses Measurement
5. A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs
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1. A Flexible Setup for Dynamic On-State Resistance Measurements of GaN HEMTs With One-Factor-at-a-Time Capability;IEEE Transactions on Power Electronics;2024-06
2. Machine Learning Based Sensor Fusion for Junction Temperature Estimation;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
3. A Novel ON-State Resistance Estimation Technique for Online Condition Monitoring of Semiconductor Devices Under Noisy Conditions;IEEE Open Journal of Instrumentation and Measurement;2024
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