A Novel ON-State Resistance Estimation Technique for Online Condition Monitoring of Semiconductor Devices Under Noisy Conditions-Reference-Cited by-同舟云学术

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A Novel ON-State Resistance Estimation Technique for Online Condition Monitoring of Semiconductor Devices Under Noisy Conditions

Published:2024 Issue: Volume:3 Page:1-13
ISSN:2768-7236
Container-title:IEEE Open Journal of Instrumentation and Measurement
language:
Short-container-title:IEEE Open J. Instrum. Meas.

Author:

Asoodar Mohsen¹^ORCID,Nahalparvari Mehrdad¹^ORCID,Schneider Simon¹^ORCID,Shafikhani Iman²^ORCID,Ingeström Gunnar³^ORCID,Nee Hans-Peter¹^ORCID

Affiliation:

1. Department of Electrical Engineering, KTH Royal Institute of Technology, Stockholm, Sweden

2. Department of Electrical Engineering, Linköping University, Linköping, Sweden

3. Grid and Power Quality Solutions, Hitachi Energy Sweden AB, Västerås, Sweden

Funder

Grid and Power Quality Solutions (GPQS) Unit of Hitachi Energy Sweden AB

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9552935/10413235/10479961.pdf?arnumber=10479961

Reference34 articles.

1. An ON-State Voltage Calculation Scheme of MMC Submodule IGBT

2. Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets

3. A New Complete Condition Monitoring Method for SiC Power MOSFETs

4. In-Service Diagnostics for Wire-Bond Lift-off and Solder Fatigue of Power Semiconductor Packages

5. Evaluation of $V_{\rm ce}$ Monitoring as a Real-Time Method to Estimate Aging of Bond Wire-IGBT Modules Stressed by Power Cycling

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