Author:
Lagow B.W.,Turkot B.A.,Robertson I.M.,Coleman J.J.,Roh S.D.,Forbes D.V.,Rehn L.E.,Baldo P.M.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Cited by
5 articles.
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1. MD simulation of ion implantation damage in AlGaAs: III. Defect accumulation and amorphization;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-01
2. MD simulation of ion implantation damage in AlGaAs: II. Generation of point defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-01
3. Damage behaviour of GaAs/AlAs multilayer structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08
4. Compositional variation of microstructure in ion-implanted AlxGa1−xAs;Journal of Materials Research;2000-09
5. Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/Al0.3Ga0.7As Multiple Quantum Wells;MRS Proceedings;1999