Gate Electrode and Doping Engineered β – Ga2O3 Recessed Gate MOSFET for RF Applications
Author:
Affiliation:
1. University of Delhi South Campus,Department of Electronic Science,New Delhi,India,110021
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10440722/10440669/10440800.pdf?arnumber=10440800
Reference20 articles.
1. Properties and perspectives of ultrawide bandgap Ga2O3 in optoelectronic applications
2. Recent progress in the growth of β-Ga2O3 for power electronics applications
3. Toward high voltage radio frequency devices in β-Ga2O3
4. A review of Ga2O3materials, processing, and devices
5. Progress in state-of-the-art technologies of Ga2O3 devices
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