Write-Verify Scheme for IGZO DRAM in Analog in-Memory Computing-Reference-Cited by-同舟云学术

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Write-Verify Scheme for IGZO DRAM in Analog in-Memory Computing

Published:2022-05-28 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Symposium on Circuits and Systems (ISCAS)
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Author:

Caselli Michele¹,Subhechha Subhali²,Debacker Peter²,Mallik Arindam²,Verkest Diederik²

Affiliation:

1. KU Leuven

2. imec Leuven

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9937201/9937203/09937962.pdf?arnumber=9937962

Reference8 articles.

1. Towards 10000TOPS/W DNN Inference with Analog in-Memory Computing – A Circuit Blueprint, Device Options and Requirements

2. Charge Sharing and Charge Injection A/D Converters for Analog In-Memory Computing

3. First demonstration of sub-12 nm Lg gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices;subhechha;IEEE Symposium on VLSI Technology,2021

4. Multi-pillar SOT-MRAM for Accurate Analog in-Memory DNN Inference;doevenspecks;Symposium on VLSI Technology,2021

5. Design-Technology Space Exploration for Energy Efficient AiMC-Based Inference Acceleration

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TiCoSb Heusler alloy-based magnetic tunnel junction for efficient computing in memory architecture;Journal of Computational Electronics;2024-08-30

2. Sequential Design of PEALD In–Ga–Zn–O Active Layer for Enhancing TFT Stability;IEEE Transactions on Electron Devices;2023-12

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