Study of the Thermomechanical Strain Induced by Current Pulses in SiC-Based Power MOSFET-Reference-Cited by-同舟云学术

Study of the Thermomechanical Strain Induced by Current Pulses in SiC-Based Power MOSFET

Published:2021-07 Issue:7 Volume:42 Page:1089-1092
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Anoldo Laura,Triolo Claudia,Panarello Saverio^ORCID,Garesci Francesca,Russo Sebastiano,Messina Angelo Alberto^ORCID,Calabretta Michele^ORCID,Patane Salvatore^ORCID

Funder

ECSEL JU Project PROGRESSUS

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9467820/09420737.pdf?arnumber=9420737

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