Multiphysics simulation study of thermal stress effects in nanoscale FinFETs heterogeneously integrated with GaN high-power device on silicon substrate
Author:
Funder
Zhejiang Province Natural Science Foundation
Huimin Technology Research and Development Projects of Ningbo
Key Research and Development Program of Ningxia
National Natural Science Foundation of China
Publisher
Elsevier BV
Reference38 articles.
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