Dead-space-based theory correctly predicts excess noise factor for thin GaAs and AlGaAs avalanche photodiodes-Reference-Cited by-同舟云学术

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Dead-space-based theory correctly predicts excess noise factor for thin GaAs and AlGaAs avalanche photodiodes

Published:2000-03 Issue:3 Volume:47 Page:625-633
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Saleh M.A.,Hayat M.M.,Saleh B.E.A.,Teich M.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/17855/00824739.pdf?arnumber=824739

Cited by 74 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gain and excess noise properties of 3-gain-stage InGaAs/InAlAs avalanche photodetector;Physica B: Condensed Matter;2024-06

2. Multi-gain stage avalanche photodiode based on InGaAs/InAlAs superlattice;Sixth Conference on Frontiers in Optical Imaging and Technology: Novel Detector Technologies;2024-04-30

3. Performance Optimization of 3-gain-stage InGaAs/InAlAs Avalanche Photodetector;2024 Photonics & Electromagnetics Research Symposium (PIERS);2024-04-21

4. Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region;Nanomaterials;2023-02-02

5. Ultrafast and Low-Threshold THz Mode Switching of Two-Dimensional Nonlinear Metamaterials;Nano Letters;2022-02-08

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