Effect of Nitrogen Incorporation in a Gd Cap Layer on the Reliability of Deep-Submicrometer Hf-Based High-$k$/Metal-Gate nMOSFETs-Reference-Cited by-同舟云学术

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Effect of Nitrogen Incorporation in a Gd Cap Layer on the Reliability of Deep-Submicrometer Hf-Based High-$k$/Metal-Gate nMOSFETs

Published:2009-07 Issue:7 Volume:30 Page:781-783
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chia-Wei Hsu ,Yean-Kuen Fang ,Wen-Kuan Yeh ,Chun-Yu Chen ,Chien-Ting Lin ,Che-Hua Hsu ,Li-Wei Cheng ,Chien-Ming Lai

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5109799/05075545.pdf?arnumber=5075545

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs;Semiconductor Science and Technology;2014-09-15

2. Effect of $\hbox{NH}_{3}$ Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-$ \kappa$ Dielectric nMOSFETs;IEEE Transactions on Electron Devices;2011-03

3. RETRACTED: Impact of SOI thickness on device performance and gate oxide reliability of Ni fully silicide metal-gate strained SOI MOSFET;Microelectronic Engineering;2011-03

4. The Impact of Oxide Traps Induced by SOI Thickness on Reliability of Fully Silicide Metal-Gate Strained SOI MOSFET;IEEE Electron Device Letters;2010-02

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