Current Driven Random Exploration of Resistive Switching Devices, an Opportunity to Improve Bit Error Ratio-Reference-Cited by-同舟云学术

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Current Driven Random Exploration of Resistive Switching Devices, an Opportunity to Improve Bit Error Ratio

Published:2023-06-06 Issue: Volume: Page:
ISSN:
Container-title:2023 14th Spanish Conference on Electron Devices (CDE)
language:
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Author:

Cirera Albert¹,Garrido Blas¹,Rubio Antonio²,Vourkas Ioannis³

Affiliation:

1. Universitat de Barcelona,MIND-IN2UB,Dept. of Electronic and Biomedical Engineering,Barcelona,Spain

2. Universitat Politècnica de Catalunya,Dept. of Electronic Engineering,Barcelona,Spain

3. Universidad Tecnica Federico Santa Maria,Dept. of Electronic Engineering,Valparaiso,Chile

Funder

FONDECYT

ANID

MICINN

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10339380/10339408/10339522.pdf?arnumber=10339522

Reference24 articles.

1. Introduction to new memory paradigms: memristive phenomena and neuromorphic applications

3. Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)

4. Self-directed channel memristor for high temperature operation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Conditional and Multi-Level WRITE Operations on Current-Controlled Memristive Devices for Neuromorphic Applications;2024 IEEE 24th International Conference on Nanotechnology (NANO);2024-07-08

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