Thermal Dependence of the Resistance of TiN/Ti/HfO<sub>2</sub>/Pt Memristors-Reference-Cited by-同舟云学术

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Thermal Dependence of the Resistance of TiN/Ti/HfO₂/Pt Memristors

Published:2023-06-06 Issue: Volume: Page:
ISSN:
Container-title:2023 14th Spanish Conference on Electron Devices (CDE)
language:
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Author:

Jiménez-Molinos F.¹,Vinuesa G.²,García H.²,Tarre A.³,Tamm A.³,Kalam K.³,Kukli K.³,Dueñas S.²,Castán H.²,González M.B.⁴,Campabadal F.⁴,Maldonado D.¹,Cantudo A.¹,Roldán J.B.¹

Affiliation:

1. Univ. de Granada,Dep. Elec. y Tec. de Comp.,Granada,Spain,18071

2. Universidad de Valladolid,Departamento de Electrónica,Valladolid,Spain,47011

3. Institute of Physics, University of Tartu,Tartu,Estonia

4. Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC),Bellaterra,Spain,08193

Funder

FEDER

European Regional Development Fund

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10339380/10339408/10339514.pdf?arnumber=10339514

Reference14 articles.

1. Memristive technologies for data storage, computation, encryption, and radio-frequency communication

2. A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules

3. Hybrid 2D–CMOS microchips for memristive applications

4. Investigation of the multilevel capability of TiN/Ti/HfO2/W resistive switching devices by sweep and pulse programming

5. Controlling the intermediate conductance states in RRAM devices for synaptic applications

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