Integration of Hafnium Oxide on Epitaxial SiGe for p-type Ferroelectric FET Application-Reference-Cited by-同舟云学术

Integration of Hafnium Oxide on Epitaxial SiGe for p-type Ferroelectric FET Application

Published:2020-12 Issue:12 Volume:41 Page:1762-1765
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lederer Maximilian¹^ORCID,Muller Franz¹^ORCID,Kuhnel Kati¹,Olivo Ricardo¹,Mertens Konstantin¹,Trentzsch Martin²,Dunkel Stefan²,Muller Johannes²,Beyer Sven²,Seidel Konrad¹,Kampfe Thomas¹^ORCID,Eng Lukas M.³^ORCID

Affiliation:

1. Center Nanoelectronic Technologies (CNT), Fraunhofer IPMS, Dresden, Germany

2. GLOBALFOUNDRIES Fab 1 LLC & Company KG, Dresden, Germany

3. Institute for Applied Physics, TU Dresden, Dresden, Germany

Funder

German Bundesministerium für Wirtschaft

State of Saxony in the frame of the Important Project of Common European Interest

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9269289/09225002.pdf?arnumber=9225002

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