The Temperature Coefficients of Frequency of Surface Acoustic Wave Devices With SiO x N y Passivation Films on LiTaO3 Substrates-Reference-Cited by-同舟云学术

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The Temperature Coefficients of Frequency of Surface Acoustic Wave Devices With SiO x N y Passivation Films on LiTaO3 Substrates

Published:2021-05 Issue:5 Volume:68 Page:1965-1971
ISSN:0885-3010
Container-title:IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
language:
Short-container-title:IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

Author:

Nishimura Atsushi^ORCID,Matsuda Satoru,Kabe Yoshiro

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Acoustics and Ultrasonics,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/58/9415710/09310222.pdf?arnumber=9310222

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spurious Mitigation of Layered Surface Acoustic Wave Resonators With Double-Busbar Configuration Using 42°YX-Lithium Tantalate Thin Plate;IEEE Transactions on Microwave Theory and Techniques;2023-08

2. Resonance-frequency modulation for a robust RF SAW filter design against temperature variations;Journal of the Korean Physical Society;2022-12-07

3. Critical Level of Nitrogen Incorporation in Silicon Oxynitride Films: Transition of Structure and Properties, toward Enhanced Anticorrosion Performance;ACS Applied Electronic Materials;2022-04-12

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