A multilevel-cell 32 Mb flash memory-Reference-Cited by-同舟云学术

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A multilevel-cell 32 Mb flash memory

Published: Issue: Volume: Page:
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Container-title:Proceedings ISSCC '95 - International Solid-State Circuits Conference
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Author:

Bauer M.,Alexis R.,Atwood G.,Baltar B.,Fazio A.,Frary K.,Hensel M.,Ishac M.,Javanifard J.,Landgraf M.,Leak D.,Loe K.,Mills D.,Ruby P.,Rozman R.,Sweha S.,Talreja S.,Wojciechowski K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/3909/11339/00535462.pdf?arnumber=535462

Cited by 68 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Floating‐Gate Memory;75th Anniversary of the Transistor;2023-07-03

2. A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-nand Technology and Featuring a 23.3 Gb/mm² Bit Density;IEEE Solid-State Circuits Letters;2023

3. Memory technology—a primer for material scientists;Reports on Progress in Physics;2020-07-16

4. Self-Clamping Programming in Narrow-Bridge Floating Gate Cells for Multi-Level Logic Non-Volatile Memory Applications;IEEE Journal of the Electron Devices Society;2020

5. Scaling Challenges of Floating Gate Non-Volatile Memory and Graphene as the Future Flash Memory Device: A Review;Journal of Nanoelectronics and Optoelectronics;2019-09-01

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