A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-nand Technology and Featuring a 23.3 Gb/mm<sup>2</sup> Bit Density-Reference-Cited by-同舟云学术

A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-nand Technology and Featuring a 23.3 Gb/mm² Bit Density

Published:2023 Issue: Volume:6 Page:161-164
ISSN:2573-9603
Container-title:IEEE Solid-State Circuits Letters
language:
Short-container-title:IEEE Solid-State Circuits Lett.

Author:

Khakifirooz Ali¹^ORCID,Anaya Eduardo²,Balasubrahmanyam Sriram²,Bennett Geoff¹,Castro Daniel²,Egler John²,Fan Kuangchan²,Ferdous Rifat¹^ORCID,Ganapathi Kartik¹,Guzman Omar²,Ha Chang Wan¹,Haque Rezaul²,Harish Vinaya²,Jalalifar Majid²,Jungroth Owen W.²,Kang Sung-Taeg¹,Karbasian Golnaz¹,Kim Jee-Yeon¹,Li Siyue²,Madraswala Aliasgar S.²,Maddukuri Srivijay²,Mohammed Amr¹,Mookiah Shanmathi²,Nagabhushan Shashi²,Ngo Binh²,Patel Deep²,Poosarla Sai Kumar²,Prabhu Naveen V.²,Quiroga Carlos²,Rajwade Shantanu¹,Rahman Ahsanur²,Shah Jalpa²,Shenoy Rohit S.¹,Menson Ebenezer Tachie²,Tankasala Archana¹,Thirumala Sandeep Krishna¹,Upadhyay Sagar²,Upadhyayula Krishnasree²,Velasco Ashley²,Vemula Nanda Kishore Babu²,Venkataramaiah Bhaskar²,Zhou Jiantao¹,Pathak Bharat M.²,Kalavade Pranav¹

Affiliation:

1. NAND Design, Technology and Manufacturing, Intel Corporation, Santa Clara, CA, USA

2. NAND Design, Technology and Manufacturing, Intel Corporation, Folsom, CA, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8011414/10016898/10149089.pdf?arnumber=10149089

Reference15 articles.

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2. 28.2 A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $\mathsf{i}$

3. A new read method suppressing effect of random telegraph noise in NAND flash memory by using hysteretic characteristic;jeong;Proc Symp VLSI Technol,2013

4. Time dependent threshold-voltage fluctuations in NAND flash memories: From basic physics to impact on array operation

5. 13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique

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