Analytical modelling of surface potential of modified source FD-SOI MOSFET-Reference-Cited by-同舟云学术

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Analytical modelling of surface potential of modified source FD-SOI MOSFET

Published:2016-11 Issue: Volume: Page:
ISSN:
Container-title:2016 International Conference on Emerging Trends in Communication Technologies (ETCT)
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Author:

Srivastava Nilesh Anand,Mishra Vimal Kumar,Chauhan R. K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7878355/7882919/07882990.pdf?arnumber=7882990

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enabling low-power analog and RFIC design through advanced semiconductor FDSOI MOSFETs;Engineering Research Express;2024-04-18

2. Analysis of Si₃N₄ based n-FDSOI and p-FDSOI MOSFETS for CMOS Application;2022 8th International Conference on Signal Processing and Communication (ICSC);2022-12-01

3. Performance Analysis of DMG-GOS Junctionless FinFET with high-k Spacer;2022 IEEE Silchar Subsection Conference (SILCON);2022-11-04

4. Performance Analysis of Gate-Stack Nanoscaled Recessed-S/D SOI-MOSFET for Analog Applications;Lecture Notes in Electrical Engineering;2021-12-14

5. Analog and Radio-Frequency Performance of Hetero-Gate-Dielectric FD SOI MOSFET in Re-S/D Technology;Lecture Notes in Electrical Engineering;2020-10-15

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