Suppression of Stress Induced Aluminum Void Formation
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4208631/4208632/04208637.pdf?arnumber=4208637
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanced tetraethyl orthosilicate SiO2 multi-layer structures via high-temperature stress migration;Materials Science in Semiconductor Processing;2018-08
2. Stress-induced and electromigration voiding in aluminum interconnects passivated with silicon nitride;Journal of Applied Physics;2002-03-15
3. Simulation of the temperature and current density scaling of the electromigration-limited reliability of near-bamboo interconnects;Journal of Materials Research;1998-05
4. Electromigration in thin-films for microelectronics;Microelectronics Reliability;1993-09
5. Influence of hydrogen evolution from plasma-deposited silicon nitride on underlying aluminum deformations;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-03
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