Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanced tetraethyl orthosilicate SiO2 multi-layer structures via high-temperature stress migration-Reference-Cited by-同舟云学术

Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanced tetraethyl orthosilicate SiO2 multi-layer structures via high-temperature stress migration

Published:2018-08 Issue: Volume:83 Page:239-248
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Naoe Takuya,Endoh Hirohiko,Fuchino Fumihiro,Miyata Masanori,Miyake Hidetsugu,Takahashi Takuya,Fujimoto Takaaki

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

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2. F.G. Yost, D.E. Amos, R.D. Romig, Stress-driven diffusive voiding of aluminum conductor lines, Int. Rel. Phys. Symp. Ann. Conf. 27, 1989, 193-211.

3. S. Mayumi, T. Umemoto, M. Shishino, The Effect of Cu addition to Al-Si interconnects on stress induced open-circuit failures, Int. Rel. Phys. Symp. Ann. Conf. 25, 1987, 15-21.

4. T. Hosoda, H. Yagi, H. Tauchikawa, Effects of copper and titanium addition to aluminum interconnects on electro- and stress-migration open circuit failures, Int. Rel. Phys. Symp. Ann. Conference 27, 1989, 202-206.

5. H. Koyama, Y. Mashiko, T. Nishioka, Suppression of Stress Induced Aluminum Void Formation, Int. Rel. Phys. Symp. Ann. Conf. Ann. Conf. 24, 1986, 24-29.

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