A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random Read Access and 5.8MB/s Write Throughput at up to Tj of 150 °C
Author:
Affiliation:
1. Renesas Electronics,Tokyo,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830273.pdf?arnumber=9830273
Reference7 articles.
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