NVMSurvey: Recent Advances and Comparative Analysis of Emerging Non-Volatile Memories (eNVMs)
Author:
Affiliation:
1. Amherst College
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288627/10288623/10289394.pdf?arnumber=10289394
Reference12 articles.
1. A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel
2. 33.1 A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity
3. Accurate and Fast STT-MRAM Endurance Evaluation Using a Novel Metric for Asymmetric Bipolar Stress and Deep Learning
4. High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 108 Cycles
5. A 20mb embedded stt-mram array achieving 72logic process;ito;IEDM,2021
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