A 2-Layer Transistor Pixel Stacked CMOS Image Sensor with Oxide-Based Full Trench Isolation for Large Full Well Capacity and High Quantum Efficiency-Reference-Cited by-同舟云学术

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A 2-Layer Transistor Pixel Stacked CMOS Image Sensor with Oxide-Based Full Trench Isolation for Large Full Well Capacity and High Quantum Efficiency

Published:2022-06-12 Issue: Volume: Page:
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Container-title:2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Zaitsu K.¹,Matsumoto A.¹,Nishida M.¹,Tanaka Y.¹,Yamashita H.¹,Satake Y.¹,Watanabe T.²,Araki K.²,Nei N.²,Nakazawa K.¹,Yamamoto J.¹,Uehara M.¹,Kawashima H.²,Kobayashi Y.²,Hirano T.¹,Tatani K.¹

Affiliation:

1. Sony Semiconductor Solutions Corp.,Kanagawa,Japan

2. Sony Semiconductor Manufacturing Corp.,Nagasaki,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830372.pdf?arnumber=9830372

Reference7 articles.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1.1 Semiconductor Industry: Present & Future;2024 IEEE International Solid-State Circuits Conference (ISSCC);2024-02-18

2. High Dynamic Pixel Structure Based on an Adaptive Integrating Capacitor;Sensors;2023-11-09

3. A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity;Sensors;2023-10-29

4. Image Quality Assessment for Realistic Zoom Photos;Sensors;2023-05-13

5. High Dynamic Pixel Circuit Based on Variable Integral Capacitance;2023 6th International Conference on Electronics Technology (ICET);2023-05-12

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