A 2-Layer Transistor Pixel Stacked CMOS Image Sensor with Oxide-Based Full Trench Isolation for Large Full Well Capacity and High Quantum Efficiency-Reference-Cited by-同舟云学术

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A 2-Layer Transistor Pixel Stacked CMOS Image Sensor with Oxide-Based Full Trench Isolation for Large Full Well Capacity and High Quantum Efficiency

Published:2022-06-12 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Zaitsu K.¹,Matsumoto A.¹,Nishida M.¹,Tanaka Y.¹,Yamashita H.¹,Satake Y.¹,Watanabe T.²,Araki K.²,Nei N.²,Nakazawa K.¹,Yamamoto J.¹,Uehara M.¹,Kawashima H.²,Kobayashi Y.²,Hirano T.¹,Tatani K.¹

Affiliation:

1. Sony Semiconductor Solutions Corp.,Kanagawa,Japan

2. Sony Semiconductor Manufacturing Corp.,Nagasaki,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830372.pdf?arnumber=9830372

Reference7 articles.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Dynamic Pixel Structure Based on an Adaptive Integrating Capacitor;Sensors;2023-11-09

2. A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity;Sensors;2023-10-29

3. Image Quality Assessment for Realistic Zoom Photos;Sensors;2023-05-13

4. High Dynamic Pixel Circuit Based on Variable Integral Capacitance;2023 6th International Conference on Electronics Technology (ICET);2023-05-12

5. Smart Cut^™ technology: from Substrate Enginnering to Advanced 3D Integration;2022 International Conference on IC Design and Technology (ICICDT);2022-09-21

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