Enabling UTBB Strained SOI Platform for Co-Integration of Logic and RF: Implant-Induced Strain Relaxation and Comb-Like Device Architecture-Reference-Cited by-同舟云学术

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Enabling UTBB Strained SOI Platform for Co-Integration of Logic and RF: Implant-Induced Strain Relaxation and Comb-Like Device Architecture

Published:2020-06 Issue: Volume: Page:
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Container-title:2020 IEEE Symposium on VLSI Technology
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Author:

Sun Chen,Liang Jie,Xu Haiwen,Kong Eugene,Nguyen Bich-Yen,Vandooren Anne,Schwarzenbach Walter,Maleville Christophe,Barral Vincent,Berthelon Remy,Weber Olivier,Arnaud Franck,Thean Aaron V. Y.,Gong Xiao

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9264988/9264985/09265070.pdf?arnumber=9265070

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress;2023 International Conference on IC Design and Technology (ICICDT);2023-09-25

2. Operation Scheme Optimization for Charge Trap Transistors (CTTs) Based on Fully Depleted Silicon-On-Insulator (FDSOI) Platform;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

3. Strained Silicon-on-Insulator Platform for Co-Integration of Logic and RF—Part II: Comb-Like Device Architecture;IEEE Transactions on Electron Devices;2022-04

4. Strained Silicon-on-Insulator Platform for Cointegration of Logic and RF—Part I: Implant-Induced Strain Relaxation;IEEE Transactions on Electron Devices;2021-04

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