Analysis of Failure Mechanisms During the Long-Term Retention Operation in 3-D NAND Flash Memories-Reference-Cited by-同舟云学术

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Analysis of Failure Mechanisms During the Long-Term Retention Operation in 3-D NAND Flash Memories

Published:2020-12 Issue:12 Volume:67 Page:5472-5478
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kim Shinkeun^ORCID,Lee Kyunghwan,Woo Changbeom^ORCID,Hwang Yuchul,Shin Hyungcheol

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9269285/09229191.pdf?arnumber=9229191

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive physics-based modeling of post-cycling long-term data retention in 176L 3-D NAND Flash Memories;2024 IEEE International Memory Workshop (IMW);2024-05-12

2. Modeling of Post-Cycling Retention Bake in 3-D CTF TLC NAND Arrays;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Experimental Segmentation of Vertical Charge Loss Mechanisms in Charge Trap-Based 3D NAND Arrays;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Comprehensive Characterization Method for Modeling Retention Transients in NAND Flash Memory;IEEE Transactions on Electron Devices;2024

5. Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory;Micromachines;2023-11-30

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