A 9-to-42-GHz High-Gain Low-Noise Amplifier Using Coupled Interstage Feedback in 0.15-μm GaAs pHEMT Technology
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, Cluny Road, Singapore
Funder
National Research Foundation (NRF) of Singapore
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Hardware and Architecture
Link
http://xplorestaging.ieee.org/ielx7/8919/10089883/10026458.pdf?arnumber=10026458
Reference48 articles.
1. A 22.9–38.2-GHz Dual-Path Noise-Canceling LNA With 2.65–4.62-dB NF in 28-nm CMOS
2. Analysis and circuit modeling of on-chip transformers
3. A 21-to-41-GHz High-Gain Low Noise Amplifier With Triple-Coupled Technique for Multiband Wireless Applications
4. An equivalent lumped-circuit model for on-chip symmetric intertwined transformer
5. A 20 MHz–2 GHz Inductorless Two-Fold Noise-Canceling Low-Noise Amplifier in 28-nm CMOS
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