A Gm -Boosting Technique for Millimeter-Wave Low-Noise Amplifiers in 28-nm Triple-Well Bulk CMOS Using Floating Resistor in Body Biasing
Author:
Affiliation:
1. School of Electrical and Electronic Engineering, University College Dublin, Dublin 4, Ireland
Funder
Science Foundation Ireland
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Hardware and Architecture
Link
http://xplorestaging.ieee.org/ielx7/8919/9985434/09868137.pdf?arnumber=9868137
Reference31 articles.
1. Design of Wideband LNA Employing Cascaded Complimentary Common Gate and Common Source Stages
2. A Wideband Variable Gain LNA With High OIP3 for 5G Using 40-nm Bulk CMOS
3. A 20-GHz 1.9-mW LNA Using g m-Boost and Current-Reuse Techniques in 65-nm CMOS for Satellite Communications
4. A 0.02–4.5-GHz LN(T)A in 28-nm CMOS for 5G Exploiting Noise Reduction and Current Reuse
5. A Wideband 2–5 GHz Noise Canceling Subthreshold Low Noise Amplifier
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