Accurate and Insightful Closed-Form Prediction of Subthreshold SRAM Hold Failure Rate-Reference-Cited by-同舟云学术

Accurate and Insightful Closed-Form Prediction of Subthreshold SRAM Hold Failure Rate

Published:2022-07 Issue:7 Volume:69 Page:2767-2780
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Van Brandt Leopold¹^ORCID,Saeidi Roghayeh¹,Bol David¹^ORCID,Flandre Denis¹^ORCID

Affiliation:

1. ICTEAM Institute, Université Catholique de Louvain, Ottignies-Louvain-la-Neuve, Belgium

Funder

National Fund for Scientific Research (FNRS) of Belgium under FRIA Grant

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture

Link

http://xplorestaging.ieee.org/ielx7/8919/9809931/09754218.pdf?arnumber=9754218

Reference38 articles.

1. Dynamic single-p-well SRAM bitcell characterization with back-bias adjustment for optimized wide-voltage-range SRAM operation in 28 nm UTBB FD-SOI;thomas;IEDM Tech Dig,2014

2. Noise margin criteria for digital logic circuits

3. Nanometer Device Scaling in Subthreshold Logic and SRAM

4. Static-noise margin analysis of MOS SRAM cells

5. Interests and Limitations of Technology Scaling for Subthreshold Logic

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