A bandgap circuit operating up to 300°C using lateral bipolar transistors in thin-film CMOS-SOI technology
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/6647/17747/00819838.pdf?arnumber=819838
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Fabrication of silicon-on-diamond substrate with an ultrathin SiO2 bonding layer;Japanese Journal of Applied Physics;2018-05-17
2. Impact of the silicon on diamond structure for high temperature switching applications;Japanese Journal of Applied Physics;2015-02-18
3. Temperature Sensor Front End in SOI CMOS Operating up to 250 $^{\circ}\hbox{C}$;IEEE Transactions on Circuits and Systems II: Express Briefs;2014-07
4. Device characteristics of the thin-film silicon-on-insulator power MOSFETs at high temperatures;Japanese Journal of Applied Physics;2014-06-01
5. Parasitic Bipolar Effect of a Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistor at High Temperatures;Japanese Journal of Applied Physics;2013-04-01
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