Impact of the silicon on diamond structure for high temperature switching applications-Reference-Cited by-同舟云学术

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Impact of the silicon on diamond structure for high temperature switching applications

Published:2015-02-18 Issue:4S Volume:54 Page:04DP09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kanoya Hiroki,Nakagawa Kentaro,Matsumoto Satoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=4S/a=04DP09/pdf

Reference29 articles.

1. State of the art of high temperature power electronics

2. Wide-voltage SOI-BiCDMOS technology for high-temperature automotive applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of silicon-on-diamond substrate with an ultrathin SiO2 bonding layer;Japanese Journal of Applied Physics;2018-05-17

2. Impact of three-dimensional stacking silicon on diamond substrate for the electrostatic discharge protection device;Japanese Journal of Applied Physics;2016-03-29

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