Poly-Si TFTs With Asymmetric Dual-Gate for Kink Current Reduction
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/28278/01264103.pdf?arnumber=1264103
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides;Advanced Materials;2020-03-16
2. Kink Suppression and High Reliability of Asymmetric Dual Channel Poly-Si Thin Film Transistors for High Voltage Bias Stress;IEICE Transactions on Electronics;2019-01-01
3. Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-07
4. A High-Current Kink Effect Free Z-Gate Poly–Si Thin-Film Transistor;IEEE Electron Device Letters;2016-07
5. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor;Scientific Reports;2016-04
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