Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep24734.pdf
Reference76 articles.
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4. M. Shur, M. Hack & J. G. Shaw . A new analytic model for amorphous silicon thin-film transistors, J. Appl. Phys. 66, 3371 (1989).
5. M. K. Hatalis & D. W. Greve . Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films. J. Appl. Phys. 63, 2260 doi: 10.1063/1.341065 (1988).
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