Solid-State Diode Technology for Millimeter and Submillimeter-Wave Remote Sensing Applications: Current Status and Future Trends
Author:
Affiliation:
1. European Space Agency, European Space Research and Technology Centre, Keplerlaan 1, Noordwijk, The Netherlands
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/6668/9769702/09769733.pdf?arnumber=9769733
Reference76 articles.
1. Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology
2. On-Wafer Noise Measurement at 300 GHz Using UTC-PD as Noise Source
3. Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology
4. Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes
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