Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology-Reference-Cited by-同舟云学术

Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology

Published:2020-06 Issue:6 Volume:68 Page:2268-2277
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Ghanem H.^ORCID,Goncalves Joao Carlos Azevedo^ORCID,Chevalier Pascal^ORCID,Alaji Issa^ORCID,Aouimeur Walid,Lepilliet Sylvie,Gloria Daniel,Gaquiere Christophe^ORCID,Danneville Francois^ORCID,Ducournau G.^ORCID

Funder

ECSEL TARANTO Project toward Advanced BiCMOS Nanotechnology Platforms for RF and THz Application

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/9108315/09051981.pdf?arnumber=9051981

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