Author:
Nishi Koichi,Narazaki Atsushi
Cited by
20 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Elucidation of New Turn-on Voltage Tail Phenomenon of IGBT and Improvement by Dynamic-CSL Structure;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
2. Split-Gate CSTBT™ for Suppression of Negative Gate Capacitance Under Short Circuit;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
3. Demonstration of Split Double Gate $\text{CSTBT}^{\text{TM}}$ for Switching Loss Reduction;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
4. A Novel Trench IGBT With N-P-N Polysilicon Gate Structure for Low EMI Noise and High Robustness;IEEE Transactions on Electron Devices;2024-04
5. Analysis on Turn-on Voltage Tail;IEEJ Transactions on Electronics, Information and Systems;2024-03-01