Distinct Short Circuit Capability of 650-V p-GaN Gate HEMTs under Single and Repetitive Tests
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9163811/9170028/09170148.pdf?arnumber=9170148
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. In Situ Detection of GaN $C_{\text{oss}}$ Changes Due to Aging for Device State-of-Health Determination in DC–DC Converters;IEEE Transactions on Power Electronics;2024-07
2. A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit;Electronics;2024-06-04
3. Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure;IEEE Transactions on Electron Devices;2024-04
4. Short-Circuit Operation of a 650-V/60-A GaN-Based Half-Bridge;Lecture Notes in Electrical Engineering;2023-11-29
5. A Behavioral Model for Short-Circuit Operation of a GaN-based Half Bridge;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
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