Doping and Dopingless Tunnel Field Effect Transistor-Reference-Cited by-同舟云学术

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Doping and Dopingless Tunnel Field Effect Transistor

Published:2021-04-02 Issue: Volume: Page:
ISSN:
Container-title:2021 6th International Conference for Convergence in Technology (I2CT)
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Author:

Singh Prabhat,Samajdar Dip Prakash,Yadav Dharmendra Singh

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9417810/9417812/09418076.pdf?arnumber=9418076

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Temperature Impacts on I-V Characteristics to Analog/RF of Drain Underlap Based L-Shaped TFET;2024 IEEE 24th International Conference on Nanotechnology (NANO);2024-07-08

2. Investigation of a Dual-Drain Technique on a Nanowire Tunnel Field-Effect Transistor for Bio-sensitivity Enhancement;Journal of Electronic Materials;2024-04-03

3. Simulation study of conventional hetero-junction tunnel field effect transistor for IoT applications;AIP Conference Proceedings;2024

4. Vertical Tunnel Field Effect Transistors (VTFETs): A Potential Candidate for Low Power Applications;2023 3rd International Conference on Intelligent Technologies (CONIT);2023-06-23

5. Impact of work function variation for enhanced electrostatic control with suppressed ambipolar behavior for dual gate L-TFET;Current Applied Physics;2022-12

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