D–T Neutron and 60Co-Gamma Irradiation Effects on HPSI 4H-SiC Photoconductors-Reference-Cited by-同舟云学术

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D–T Neutron and 60Co-Gamma Irradiation Effects on HPSI 4H-SiC Photoconductors

Published:2018-01 Issue:1 Volume:65 Page:558-565
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Raja P. Vigneshwara^ORCID,Murty N. V. L. Narasimha^ORCID

Funder

Board of Research in Fusion Science and Technology (BRFST), Government of India

BRFST is now under DAE-BRNS, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/8263298/08123867.pdf?arnumber=8123867

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors;Journal of Applied Physics;2022-06-28

2. Effects of oxygen plasma treatment on Cd1−xZnxTe material and devices;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2021-07

3. Effect of Very High-Fluence Proton Radiation on 6H-SiC Photoconductive Proton Detectors;IEEE Electron Device Letters;2019-12

4. Physical design and evaluation of a high-intensity accelerator-based D-D/D-T fusion neutron source;The European Physical Journal A;2019-09

5. Simulation of SiC radiation detector degradation;Chinese Physics B;2019-01

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