Simulation of SiC radiation detector degradation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/28/1/010701/pdf
Reference35 articles.
1. Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics
2. Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking
3. Silicon carbide and its use as a radiation detector material
4. Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes
5. Deep levels created by low energy electron irradiation in 4H-SiC
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