Effects of longitudinal and latitudinal grain boundaries on the performance of large-grain polysilicon MOSFET-Reference-Cited by-同舟云学术

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Effects of longitudinal and latitudinal grain boundaries on the performance of large-grain polysilicon MOSFET

Published:2001-05 Issue:5 Volume:22 Page:218-220
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jagar S.,Wang H.,Chan M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/19878/00919234.pdf?arnumber=919234

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