Experiment Characterization of Front and Back Interfaces Impact on Back Gate Modulation in UTBB-FDSOI MOSFETs-Reference-Cited by-同舟云学术

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Experiment Characterization of Front and Back Interfaces Impact on Back Gate Modulation in UTBB-FDSOI MOSFETs

Published:2019-07 Issue: Volume: Page:
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Container-title:2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Chen Wangyong,Cai Linlin,Cao Yongfeng,Liao Duanquan,Tian Ming,Zhang Xing,Liu Xiaoyan,Du Gang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8963813/8984753/08984894.pdf?arnumber=8984894

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate-controlled gain tuning of fully depleted silicon-on-insulator-based 1 T pixel for in-sensor white balance;Japanese Journal of Applied Physics;2024-02-05

2. Impact of Back-Gate Biasing on the Transport Properties of 22 nm FD-SOI MOSFETs at Cryogenic Temperatures;IEEE Transactions on Electron Devices;2022-10

3. Analysis of Variability in Transconductance and Mobility of Nanowire Transistors;2022 36th Symposium on Microelectronics Technology (SBMICRO);2022-08-22

4. Characteristics of 22 nm UTBB-FDSOI technology with an ultra-wide temperature range;Semiconductor Science and Technology;2022-08-19

5. Analytical Model for Interface Traps-Dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETs;IEEE Transactions on Electron Devices;2020-11

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