Comparative study of Single Gate And Double Gate Fully Depleted Silicon on Insulator MOSFET-Reference-Cited by-同舟云学术

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Comparative study of Single Gate And Double Gate Fully Depleted Silicon on Insulator MOSFET

Published:2015-11 Issue: Volume: Page:
ISSN:
Container-title:2015 Communication, Control and Intelligent Systems (CCIS)
language:
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Author:

Devi Sakshi,Singh Avtar,Lorenzo Rohit,Chaudhury Saurabh

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7433555/7437856/07437940.pdf?arnumber=7437940

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced comparative performance analysis of Double Gate (DG) MOSFET over Fully Depleted Silicon on Insulator (FD-SOI) MOSFET;2022 4th International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE);2022-12-29

2. Impact of Channel Doping Concentration on the Performance Characteristics and the Reliability of Ultra-Thin Double Gate DG-FinFET Compared with Nano-Single Gate FD-SOI-MOSFET by Using TCAD-Silvaco Tool;Silicon;2021-05-01

3. Thickness effect on low-power driving of MoS2 transistors in balanced double-gate fields;Nanotechnology;2020-04-03

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