Synthesis of Ge<sub>1-x</sub> Sn<sub>x</sub> nanoparticles under non-inert conditions*-Reference-Cited by-同舟云学术

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Synthesis of Ge_1-x Sn_x nanoparticles under non-inert conditions*

Published:2023-10-22 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)
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Author:

Søgaard Nicolaj Brink¹,Bondesgaard Martin²,Bertelsen Andreas Dueholm²,Iversen Bo Brummerstedt²,Julsgaard Brian³

Affiliation:

1. Aarhus University, Gustav Wieds Vej 14,Interdisciplinary Nanoscience Center (iNANO),Aarhus C,Denmark,8000

2. Aarhus University, Langelandsgade 140,Department of Chemistry,Aarhus C,Denmark,8000

3. Aarhus University, Ny Munkegade 120,Department of Physics and Astronomy,Aarhus C,Denmark,8000

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10343386/10343419/10344088.pdf?arnumber=10344088

Reference11 articles.

1. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

2. Optically Pumped GeSn Microdisk Lasers on Si

3. Lasing in direct-bandgap GeSn alloy grown on Si

4. SnxGe1–x Alloy Nanocrystals: A First Step toward Solution-Processed Group IV Photovoltaics

5. Energy Gap Tuning and Carrier Dynamics in Colloidal Ge1–xSnx Quantum Dots

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