3-Tier BSI CIS with 3D Sequential & Hybrid Bonding Enabling a1.4um pitch,106dB HDR Flicker Free Pixel-Reference-Cited by-同舟云学术

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3-Tier BSI CIS with 3D Sequential & Hybrid Bonding Enabling a1.4um pitch,106dB HDR Flicker Free Pixel

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Guyader F.¹,Batude P.²,Malinge P.¹,Vire E.¹,Lacord J.²,Jourdon J.¹,Poulet J.¹,Gay L.¹,Ponthenier F.²,Joblot S.¹,Farcy A.¹,Brunet L.²,Albouy A.²,Theodorou C.³,Ribotta M.²,Bosch D.²,Ollier E.²,Muller D.¹,Neyens M.¹,Jeanjean D.¹,Ferrotti T.¹,Mortini E.¹,Mattei J.G.¹,Inard A.¹,Fillon R.¹,Lalanne F.¹,Roy F.¹,Josse E.¹

Affiliation:

1. STMicroelectronics

2. CEA-Leti, Univ. Grenoble Alpes

3. Univ. Grenoble Alpes, Univ. Savoie Mont Blanc,CNRS, Grenoble INP, IMEP-LAHC

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019432.pdf?arnumber=10019432

Reference17 articles.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures;Solid-State Electronics;2024-02

2. Extracting edge conduction around threshold in mesa-isolated SOI MOSFETs;Solid-State Electronics;2023-11

3. Electrical characterization of SOI pMOS device leakage;Solid-State Electronics;2023-10

4. SOI pMOS drain leakage understanding based on TCAD and measurements;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

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