First Demonstration of State-of-the-art GaN HEMTs for Power and RF Applications on A Unified Platform with Free-standing GaN Substrate and Fe/C Co-doped Buffer-Reference-Cited by-同舟云学术

First Demonstration of State-of-the-art GaN HEMTs for Power and RF Applications on A Unified Platform with Free-standing GaN Substrate and Fe/C Co-doped Buffer

Published:2022-12-03 Issue: Volume: Page:
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Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Wu Mei¹,Zhang Meng¹,Yang Ling¹,Hou Bin¹,Yu Qian¹,Li Shiming¹,Shi Chunzhou¹,Zhao Wei¹,Lu Hao¹,Chen Weiwei²,Zhu Qing¹,Ma Xiaohua¹,Hao Yue¹

Affiliation:

1. Xidian University,State Key Discipline Lab of Wide Band Gap Semiconductor Technology,Xi’an,China,710071

2. China Academy of Space Technology (Xi’an),Xi’an,China,710100

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019550.pdf?arnumber=10019550

Reference11 articles.

1. Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates

2. Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

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