First Demonstration of Ultra-low D<sub>it</sub> Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch-Reference-Cited by-同舟云学术

First Demonstration of Ultra-low D_it Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Chen Chun-Kuei¹,Fang Zihang¹,Hooda Sonu¹,Lal Manohar¹,Chand Umesh¹,Xu Zefeng¹,Pan Jieming¹,Tsai Shih-Hao¹,Zamburg Evgeny¹,Thean Aaron Voon-Yew¹

Affiliation:

1. National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117583

Funder

National Research Foundation

National University of Singapore

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019440.pdf?arnumber=10019440

Reference22 articles.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Random Interface Traps Fluctuation on Device Variation of Oxide-Semiconductor Ferroelectric Field-Effect Transistor Memories;IEEE Electron Device Letters;2023-12

2. HfO₂–ZrO₂ Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance;IEEE Transactions on Electron Devices;2023-07

3. Recent Research for HZO-Based Ferroelectric Memory towards In-Memory Computing Applications;Electronics;2023-05-19

4. High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect;IEEE Transactions on Electron Devices;2023-04