Record 94 GHz performance from N-polar GaN-on-Sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE
Author:
Affiliation:
1. University of California Santa Barbara,Santa Barbara,CA,USA
Funder
Semiconductor Research Corporation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019475.pdf?arnumber=10019475
Reference13 articles.
1. Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs
2. A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs
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1. Inductive Source Degeneration in 40-nm GaN HEMTs for Operation Above 100 GHz;IEEE Transactions on Microwave Theory and Techniques;2024-01
2. Scaled InAlN/GaN HEMT on Sapphire With fT/fmax of 190/301 GHz;IEEE Transactions on Electron Devices;2023-06
3. Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination;Micromachines;2023-05-08
4. Improving the Barrier Height of N-Polar GaN Schottky Diodes Using Mg-Diffusion Process;IEEE Transactions on Electron Devices;2023
5. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability;IEEE Transactions on Electron Devices;2023
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