Analysis of dark current in IR detectors on thinned p-type HgCdTe
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/1674/00043811.pdf?arnumber=43811
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photovoltaic Detectors in MCT;Infrared Detectors and Emitters: Materials and Devices;2001
2. A model for 1/f noise in diffusion current based on surface recombination velocity fluctuations and insulator trapping;IEEE Transactions on Electron Devices;1994-05
3. Evidence for 1/f noise in diffusion current due to insulator trapping and surface recombination velocity fluctuations;Journal of Electronic Materials;1993-08
4. Magneto-optic and magnetotransport study of InAs/Ga1-xInxSb superlattices;Semiconductor Science and Technology;1993-01-01
5. Determination of band gap and effective masses in InAs/Ga1−xInxSb superlattices;Applied Physics Letters;1992-07-13
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