Leakage current of undoped LPCVD polycrystalline silicon thin-film transistors-Reference-Cited by-同舟云学术

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Leakage current of undoped LPCVD polycrystalline silicon thin-film transistors

Published:1995-05 Issue:5 Volume:42 Page:950-956
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Dimitriadis C.A.,Coxon P.A.,Economou N.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/8655/00381993.pdf?arnumber=381993

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Leakage Current Reduction Using 350-nm Ultra-Violet Irradiation in P-Channel Polycrystalline-Silicon Thin-Film Transistors;IEEE Transactions on Device and Materials Reliability;2015-03

2. Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation;Journal of Display Technology;2014-07

3. A novel uniformly doped barrier modulated ultra-deep-submicron poly-Si thin film transistor with very low subthreshold slope;Semiconductor Science and Technology;2014-05-29

4. Tilted Back Exposure for Lightly Doped Drain Structure in Metal Induced Lateral Crystallization Poly Si Thin Film Transistors;Journal of Nanoscience and Nanotechnology;2013-10-01

5. Leakage Current Reduction Techniques in Poly-Si TFTs for Active Matrix Liquid Crystal Displays: A Comprehensive Study;IEEE Transactions on Device and Materials Reliability;2006-06

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