Self-heating impact on TDDB in bulk FinFET devices: Uniform vs Non-uniform Stress-Reference-Cited by-同舟云学术

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Self-heating impact on TDDB in bulk FinFET devices: Uniform vs Non-uniform Stress

Published:2016 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Integrated Reliability Workshop (IIRW)
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Author:

Chbili Z.,Kerber A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7898592/7904886/07904898.pdf?arnumber=7904898

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms;Micromachines;2024-01-12

2. Self-Heating Influence on Hot Carrier Degradation Reliability of GAA FET by 3D KMC Method;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

3. Risk Management Informed by an Uncertain Bathtub Curve (Invited);2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

4. Low-Earth Orbit User Segment in the Ku and Ka-Band: An Overview of Antennas and RF Front-End Technologies;IEEE Microwave Magazine;2023-02

5. Electronically Steerable Antennas for Future Heterogeneous Communication Networks: Review and Perspectives;IEEE Journal of Microwaves;2022-10

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