Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling-Reference-Cited by-同舟云学术

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Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling

Published:2024-06-24 Issue: Volume:29 Page:1-2
ISSN:
Container-title:2024 Device Research Conference (DRC)
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Author:

Bendra M.¹,Pruckner B.¹,de Orio R.L.²,Selberherr S.²,Goes W.³,Sverdlov V.¹

Affiliation:

1. TU Wien,Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic,Gußhausstraße 27-29,Wien,Austria,A-1040

2. TU Wien,Institute for Microelectronics,Gußhausstraße 27-29,Wien,Austria,A-1040

3. Compass Point,Silvaco Europe Ltd.,St Ives,Cambridge,United Kingdom,PE27 5JL

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10605129/10605242/10605512.pdf?arnumber=10605512

Reference7 articles.

1. Back-Hopping in Spin-Transfer-Torque Devices: Possible Origin and Countermeasures

2. Spin and charge drift-diffusion in ultra-scaled MRAM cells

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